专利名称：ROM-embedded-DRAM
发明人：Casey R. Kurth,Scott J. Derner,Patrick J.
Mullarkey
申请号：US09833706申请日：20010413
公开号：US20010021122A1公开日：20010913
摘要：A ROM is embedded within an array of DRAM cells by changing a single mask ina DRAM fabrication process to selectively short circuit the DRAM capacitor lowerelectrode to its own wordline to create a read-only “1” or to the wordline of anadjacent cell to create a read only “0”.
申请人：KURTH CASEY R.,DERNER SCOTT J.,MULLARKEY PATRICK J.
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