Mask ROM device having highly integrated memory ce

专利名称：Mask ROM device having highly integrated

memory cell structure

发明人：Hajime Arai申请号：US07/872858申请日：19920423公开号：US05300804A公开日：19940405

摘要：In a mask ROM device, a plurality of recesses extending parallel to each otherare formed in a memory cell array region on the surface of a silicon substrate. In thedirection intersecting the recesses, first and second transistor trains are formed in whichselect transistors and memory transistors are connected in series. The MOS transistors ofthe transistor trains have the sidewall of recess 5 formed as a channel region. A depletionimplantation layer corresponding to data to be stored is formed on the sidewall of therecess. The first transistor train and the second transistor train are insulated and isolatedfrom each other by an LOCOS isolation film.

申请人：MITSUBISHI DENKI KABUSHIKI KAISHA

代理机构：Lowe, Price, LeBlanc & Becker

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