专利名称：ROM-embedded-DRAM发明人：KURTH CASEY R.,DERNER SCOTT
J.,MULLARKEY PATRICK J.
申请号：US83370601申请日：20010413公开号：US6410385B2公开日：20020625
摘要：A ROM is embedded within an array of DRAM cells by changing a single mask ina DRAM fabrication process to selectively short circuit the DRAM capacitor lowerelectrode to its own wordline to create a read-only \"1\" or to the wordline of an adjacentcell to create a read only \"0\".
申请人：MICRON TECHNOLOGY, INC.
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