专利名称：High efficiency three port circuit发明人：Killen, William Dean,Pike, Randy T.申请号：EP03013317.7申请日：20030612公开号：EP1376740A1公开日：20040102
专利附图：
摘要：A circuit (100) for processing radio frequency signals includes a substrate (50)where the circuit can be placed. The substrate can be a meta-material and canincorporate at least one dielectric layer (20, 30, or 40). The circuit such as a three portcircuit and at least one ground can be coupled to the substrate. The dielectric layer can
include a first region (40) with a first set of substrate properties and a second region (20)with a second set of substrate properties. Substrate properties can include permittivityand permeability. A portion (32 or 46) of the three port circuit can be selectively coupledto the second region. The permittivity and/or permeability of the second region can behigher than the permittivity and/or permeability of the first region. The increased
permittivities and/or permeabilities can reduce a size of the three port circuit and effect achange in a variety of electrical characteristics associated with the three port circuit.
申请人：HARRIS CORPORATION
地址：1025 West NASA Boulevard Melbourne Florida 32919 US
国籍：US
代理机构：Schmidt, Steffen J., Dipl.-Ing.
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