搜索
您的当前位置:首页IR11672ASPBF;IR11672ASTRPBF;中文规格书,Datasheet资料

IR11672ASPBF;IR11672ASTRPBF;中文规格书,Datasheet资料

来源:乌哈旅游
 Datasheet No - PD97469 July 13, 2011 ADVANCED SMART RECTIFIER TM CONTROL IC IR11672AS Features • • • • • • • • • • • • • • • Product Summary Flyback, Resonant Half-bridge 200V 10.7V +2A & -7A 60ns (typical) 50ns (typical) Secondary side high speed SR controller Topology DCM, CrCM flyback and Resonant half-bridge topologies 200V proprietary IC technology VD Max 500KHz switching frequency VOUT Anti-bounce logic and UVLO protection 7A peak turn off drive current Io+ & I o- (typical) Micropower start-up & ultra low quiescent current 10.7V gate drive clamp Turn on Propagation 50ns turn-off propagation delay Delay Vcc range from 11.3V to 20V Turn off Propagation Direct sensing of MOSFET drain voltage Enable function synchronized with MOSFET VDS Delay transition Cycle by Cycle MOT Check Circuit prevents multiple Package Options false trigger GATE pulses Lead-free Compatible with 0.3W Standby, Energy Star, CECP, etc. Typical Applications • LCD & PDP TV, Telecom SMPS, AC-DC adapters, ATX SMPS, Server SMPS 8-Lead SOIC Typical Connection Diagram VinRsXFMCs1Ci23RMOT4RdcU1VCCOVTMOTENVGATEGNDVSVD8765RgCdcCoIR11671IR11672AS RtnQ1LOAD www.irf.com © 2009-2011 International Rectifier http://oneic.com/

IR11672AS Page 3 4 5 6 8 9 10 10 12 22 23 24 25 Table of Contents Description Qualification Information Absolute Maximum Ratings Electrical Characteristics Functional Block Diagram Input/Output Pin Equivalent Circuit Diagram Lead Definitions Lead Assignments Application Information and Additional Details Package Details Tape and Reel Details Part Marking Information Ordering Information www.irf.com © 2009-2011 International Rectifier 2 http://oneic.com/

IR11672AS Description IR11672A is a smart secondary-side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback and resonant half-bridge converters. The IC can control one or more paralleled N-MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition. The cycle-by-cycle MOT protection circuit can automatically detect no load condition and turn off gate driver output to avoid negative current flowing through the MOSFETs. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in all operating modes. www.irf.com http://oneic.com/

3 © 2009-2011 International Rectifier IR11672AS † Industrial Comments: This family of ICs has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level. †††MSL2 260°C (per IPC/JEDEC J-STD-020) Class B (per JEDEC standard JESD22-A115) Class 2 (per EIA/JEDEC standard EIA/JESD22-A114) Class I, Level A (per JESD78) Yes †† Qualification InformationQualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model IC Latch-Up Test RoHS Compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. ††† Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information. www.irf.com © 2009-2011 International Rectifier 4 http://oneic.com/

IR11672AS Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Parameters Supply Voltage Enable Voltage Cont. Drain Sense Voltage Pulse Drain Sense Voltage Source Sense Voltage Gate Voltage Operating Junction Temperature Storage Temperature Thermal Resistance Package Power Dissipation Switching Frequency Symbol VCC VEN VD VD VS VGATE TJ TS RθJA PD fsw Min. -0.3 -0.3 -3 -5 -3 -0.3 -40 -55 Max. 20 20 200 200 20 20 150 150 128 970 500 Units V V V V V V °C °C °C/W mW kHz Remarks VCC=20V, Gate off SOIC-8 SOIC-8, TAMB=25°C Recommended Operating Conditions For proper operation the device should be used within the recommended conditions. Symbol VCC VD TJ Fsw Symbol RMOT Definition Supply voltage Drain Sense Voltage Junction Temperature Switching Frequency Min. 11.4 -3 -25 --- Max. 18 200 125 500 Units V °C kHz Recommended Component Values Component MOT pin resistor value Min. 5 Max. 75 Units kΩ www.irf.com © 2009-2011 International Rectifier 5 http://oneic.com/

IR11672AS Electrical Characteristics VCC=15V and TA = 25°C unless otherwise specified. The output voltage and current (VO and IO) parameters are referenced to GND (pin7). Supply Section Parameters Symbol Min. Typ. Max. Units Remarks Supply Voltage Operating Range VCC 11.4 18 V GBD VCC Turn On Threshold VCC ON 9.8 10.55 11.3 V VCC Turn Off Threshold VCC UVLO 8.4 9 9.7 V (Under Voltage Lock Out) VCC Turn On/Off Hysteresis VCC HYST 1.55 V 8.5 10 mA CLOAD=1nF,fSW=400kHz Operating Current ICC 50 65 mA CLOAD=10nF,fSW=400kHz Quiescent Current IQCC 1.8 2.2 mA Start-up Current 100 200 µA VCC=VCC ON - 0.1V ICC START Sleep Current 150 200 µA VEN=0V, VCC =15V I SLEEP Enable Voltage High 2.15 2.70 3.2 V VENHI Enable Voltage Low 1.2 1.6 2.0 V VENLO Enable Pull-up Resistance 1.5 MΩ GBD REN Comparator Section Parameters Turn-off Threshold Turn-on Threshold Hysteresis Input Bias Current Input Bias Current Comparator Input Offset Input CM Voltage Range One-Shot Section Parameters Blanking pulse duration Reset Threshold Hysteresis Symbol Min. -7 VTH1 -14 -22 VTH2 -150 VHYST IIBIAS1 IIBIAS2 VOFFSET VCM Typ. -3.5 -9.5 -18 55 1 30 Max. 0 -6 -14 -50 7.5 100 2 2 Units mV mV mV µA µA mV V Remarks OVT = 0V, VS=0V OVT floating, VS=0V OVT = VCC, VS=0V VD = -50mV VD = 200V GBD -0.15 Symbol Min. tBLANK 9 VTH3 VHYST3 Typ. 17 2.5 5.4 40 Max. 25 Units µs V V mV Remarks VCC=10V – GBD VCC=20V – GBD VCC=10V – GBD www.irf.com © 2009-2011 International Rectifier 6 http://oneic.com/

IR11672AS Electrical Characteristics VCC=15V and TA = 25°C unless otherwise specified. The output voltage and current (VO and IO) parameters are referenced to GND (pin7). Minimum On Time Section Parameters Symbol Min. 190 Minimum on time TONmin 2.48 Typ. 240 3.1 Max. 290 3.72 Units Remarks ns RMOT =5kΩ, VCC=12V µs RMOT =75kΩ, VCC=12V Gate Driver Section Parameters Gate Low Voltage Gate High Voltage Rise Time Fall Time Turn on Propagation Delay Turn off Propagation Delay Pull up Resistance Pull down Resistance Output Peak Current(source) Output Peak Current (sink) Symbol Min. VGLO VGTH tr1 tr2 tf1 tf2 tDon tDoff rup rdown IO source IO sink 9.0 Typ. 0.3 10.7 18 125 10 30 60 50 4 0.7 2 7 Max. 0.5 12.5 95 75 Units Remarks V IGATE = 200mA VCC=12V-18V V (internally clamped) ns CLOAD = 1nF, VCC=12V ns CLOAD = 10nF, VCC=12V ns CLOAD = 1nF, VCC=12V ns CLOAD = 10nF, VCC=12V ns VDS to VGATE -100mV overdrive ns VDS to VGATE -100mV overdrive Ω IGATE = 1A – GBD Ω IGATE = -200mA A CLOAD = 10nF – GBD A CLOAD = 10nF – GBD www.irf.com © 2009-2011 International Rectifier 7 http://oneic.com/

IR11672AS Functional Block Diagram www.irf.com © 2009-2011 International Rectifier 8 http://oneic.com/

IR11672AS I/O Pin Equivalent Circuit Diagram www.irf.com © 2009-2011 International Rectifier 9 IR11672AS PIN# 1 2 3 4 5 6 7 8 Description Supply Voltage Offset Voltage Trimming Minimum On Time Enable FET Drain Sensing FET Source Sensing Ground Gate Drive Output Lead Definitions Symbol VCC OVT MOT EN VD VS GND VGATE Lead Assignments www.irf.com © 2009-2011 International Rectifier 10

分销商库存信息:

IR

IR11672ASPBF

IR11672ASTRPBF

因篇幅问题不能全部显示,请点此查看更多更全内容

Top