专利名称：TRENCH MOSFET HAVING AN
INDEPENDENT COUPLED ELEMENT IN ATRENCH
发明人：Tetsuo Sato,Tomoaki Uno,Hirokazu
Kato,Nobuyoshi Matsuura
申请号：US14666503申请日：20150324
公开号：US20150194894A1公开日：20150709
专利附图：
摘要：A trench MOSFET is disclosed that includes a semiconductor substrate having a
vertically oriented trench containing a gate. The trench MOSFET further includes asource, a drain, and a conductive element. The conductive element, like the gate iscontained in the trench, and extends between the gate and a bottom of the trench. Theconductive element is electrically isolated from the source, the gate, and the drain. Whenemployed in a device such as a DC-DC converter, the trench MOSFET may reduce powerlosses and electrical and electromagnetic noise.
申请人：RENESAS ELECTRONICS AMERICA INC.
地址：Santa Clara CA US
国籍：US
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