Techniques to characterize iso-dense effects for m

专利名称：Techniques to characterize iso-dense effects

for microdevice manufacture

发明人：Pierre Leroux,David Ziger申请号：US10175367申请日：20020618

公开号：US20030232253A1公开日：20031218

专利附图：

摘要：A technique is provided to define a pattern () on a substrate () that includes adense region with a number of features () and an isolated feature region comprised of atleast a part of one of the features (). The dense feature region has a greater feature

density than the isolated feature region. A reference feature () is measured at a numberof different points relative to the isolated feature region and the dense feature regionwith a measurement tool (). An iso-dense effect is determined from these measurements.

申请人：LEROUX PIERRE,ZIGER DAVID

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