Power supply, a semiconductor making apparatus and

专利名称：Power supply, a semiconductor making

apparatus and a semiconductor waferfabricating method using the same

发明人：Youji Takahashi,Tsutomu Iida,Tsuyoshi

Umemoto,Makoto Kashibe

申请号：US10082160申请日：20020226公开号：US06713885B2公开日：20040330

专利附图：

摘要：In power supply and a semiconductor making apparatus and a semiconductor

fabricating method using the same, an abnormality can be detected when an offsetoccurs in a part constituting a closed-loop system of high-frequency power supply or dcpower supply for a semiconductor making apparatus. Power supply for receiving a powervalue setting signal to set strength of power and a power on/off instruction to set on oroff of outputting of the power interrupts the supply of the power even in a state in whicha subsequent power on/off instruction is on if a power sense signal according to a valueobtained by sensing the power exceeds a predetermined value when the power on/offinstruction is off.

申请人：HITACHI HIGH-TECHNOLOGIES CORPORATION

代理机构：Antonelli, Terry, Stout & Kraus, LLP

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