Mosfet having drain voltage detection function

专利名称：Mosfet having drain voltage detection

function

发明人：Nakagawa, Akio Intellectual Property

Division,Yamaguchi, Yoshihiro IntellectualProperty Div.

申请号：EP89305284.5申请日：19890525公开号：EP0343977B1公开日：19931215

摘要：A MOSFET includes a base layer (2, 4) of a first conductivity type selectivelyformed in the surface layer of a high-resistance semiconductor layer (1), and a sourcelayer of a second conductivity type selectively formed in the surface layer of the baselayer. A drain layer (6) of the second conductivity type is formed in the front or rearsurface layer of the high-resistance semiconductor layer so as to be separated from thebase layer by a predetermined distance. A gate insulating film (9) is formed on the baselayer, and a gate electrode (10) is formed on the gate insulating film. A voltage detectionterminal layer (14) of the second conductivity type independent from the source layer isformed in the base layer. A voltage detection electrode (15) is in contact with the voltagedetection terminal layer.

申请人：TOSHIBA KK

地址：JP

国籍：JP

代理机构：Freed, Arthur Woolf

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