Integrated circuit devices including shallow trenc

专利名称：Integrated circuit devices including shallow

trench isolation

发明人：Norbert Arnold申请号：US08/883356申请日：19970626公开号：US05783476A公开日：19980721

摘要：A process for forming a silicon oxide-filled shallow trench on the active surfaceof a silicon chip starts with forming a trench in the silicon chip that has an upper portionwith vertical side walls and a lower portion with tapered side walls. Then oxygen isimplanted selectively into the walls of the lower portion of the trench and the chip isheated to react the implanted oxygen with the silicon to form silicon oxide. The rest ofthe trench is then filled with deposited silicon oxide, typically by depositing a layer ofsilicon oxide over the surface and then planarizing the deposited silicon oxide essentiallyto the level of the top of the trench. The silicon-filled shallow trench serves to divide thesurface portion of the chip into discrete regions, each for housing one or more circuitcomponents of an integrated circuit.

申请人：SIEMENS AKTIENGESELLSCHAFT

代理人：Stanton C. Braden

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