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STB80NF55-06资料

来源:乌哈旅游
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®

STB80NF55-06

N-CHANNEL55V-0.005Ω -80ATO-262/TO-263

STripFET™POWERMOSFET

PRELIMINARYDATA

TYPESTB80NF55-06

ssss

VDSS55V

RDS(on)<0.0065Ω

ID80A

s

s

TYPICALRDS(on)=0.005Ω

EXCEPTIONALdv/dtCAPABILITY100%AVALANCHETESTEDAPPLICATIONORIENTEDCHARACTERIZATION

THROUGH-HOLEI2PAK(TO-262)POWERPACKAGEINTUBE(SUFFIX”-1”)\\

SURFACE-MOUNTINGD2PAK(TO-263)POWERPACKAGEINTUBE(NOSUFFIX)ORINTAPE&REEL(SUFFIX”T4”)

312

1

3

DESCRIPTION

ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransi-storshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforeare-markablemanufacturingreproducibility.APPLICATIONS

sSOLENOIDANDRELAYDRIVERS

sMOTORCONTROL,AUDIOAMPLIFIERSsDC-DCCONVERTERS

sAUTOMOTIVEENVIRONMENTABSOLUTEMAXIMUMRATINGS

SymbolVDSVDGRVGSIDIDIDM(•)Ptotdv/dtTstgTj

Parameter

Drain-sourceVoltage(VGS=0)Drain-gateVoltage(RGS=20kΩ)Gate-sourceVoltage

DrainCurrent(continuous)atTc=25oCDrainCurrent(continuous)atTc=100CDrainCurrent(pulsed)

TotalDissipationatTc=25oCDeratingFactor

PeakDiodeRecoveryvoltageslopeStorageTemperature

Max.OperatingJunctionTemperature

o

I2PAKTO-262(suffix”-1”)D2PAKTO-263(suffix”T4”)

INTERNALSCHEMATICDIAGRAM

Value5555±2080573202101.437-65to175

175

(1)ISD≤80A,di/dt≤300A/µs,VDD≤V(BR)DSS,Tj≤TJMAX

UnitVVVAAAWW/oCV/ns

oo

CC1/7

(•)Pulsewidthlimitedbysafeoperatingarea

October1999

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STB80NF55-06

THERMALDATA

Rthj-caseRthj-ambRthc-sink

Tl

ThermalResistanceJunction-caseMaxThermalResistanceJunction-ambientMaxThermalResistanceCase-sinkTypMaximumLeadTemperatureForSolderingPurpose

0.762.50.5300

C/WoC/Wo

C/WoC

o

AVALANCHECHARACTERISTICS

SymbolIAREAS

Parameter

AvalancheCurrent,RepetitiveorNot-Repetitive(pulsewidthlimitedbyTjmax)

SinglePulseAvalancheEnergy

(startingTj=25oC,ID=IAR,VDD=30V)

MaxValue

80650

UnitAmJ

ELECTRICALCHARACTERISTICS(Tcase=25oCunlessotherwisespecified)OFF

SymbolV(BR)DSSIDSSIGSS

Parameter

Drain-source

BreakdownVoltage

TestConditions

ID=250µA

VGS=0

Min.55

110±100

Typ.

Max.

UnitVµAµAnA

VDS=MaxRatingZeroGateVoltage

DrainCurrent(VGS=0)VDS=MaxRatingGate-bodyLeakageCurrent(VDS=0)

VGS=± 20V

Tc=125C

o

ON(∗)

SymbolVGS(th)RDS(on)ID(on)

Parameter

GateThresholdVoltageVDS=VGSStaticDrain-sourceOnResistance

OnStateDrainCurrent

VGS=10V

TestConditionsID=250µAID=40A

80Min.2

Typ.30.005

Max.40.0065

UnitVΩA

VDS>ID(on)xRDS(on)maxVGS=10V

DYNAMIC

Symbolgfs(∗)CissCossCrss

Parameter

Forward

TransconductanceInputCapacitanceOutputCapacitanceReverseTransferCapacitance

TestConditions

VDS>ID(on)xRDS(on)maxVDS=25V

f=1MHz

ID=40AVGS=0

Min.

Typ.5080001100220

Max.

UnitSpFpFpF

2/7

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STB80NF55-06

ELECTRICALCHARACTERISTICS(continued)SWITCHINGON

Symboltd(on)trQgQgsQgd

Parameter

Turn-onDelayTimeRiseTime

TotalGateChargeGate-SourceChargeGate-DrainCharge

TestConditions

VDD=27VID=40ARG=4.7 ΩVGS=10V(ResistiveLoad,seefig.3)VDD=44V

ID=80A

VGS=10V

Min.

Typ.352401782961

230Max.

UnitnsnsnCnCnC

SWITCHINGOFF

Symboltd(off)tftd(off)tr(Voff)tftc

Parameter

Turn-offDelayTimeFallTime

Turn-offDelayTimeOff-voltageRiseTimeFallTime

Cross-overTime

TestConditions

VDD=27VID=40A

VGS=10VRG=4.7 Ω

(ResistiveLoad,seefig.3)VDD=44VID=80A

VGS=10VRG=4.7 Ω

(InductiveLoad,seefig.5)

Min.

Typ.2608022555145205

Max.

Unitnsnsnsnsnsns

SOURCEDRAINDIODE

SymbolISDISDM(•)VSD(∗)trrQrrIRRM

Parameter

Source-drainCurrentSource-drainCurrent(pulsed)

ForwardOnVoltageReverseRecoveryTime

ReverseRecoveryCharge

ReverseRecoveryCurrent

ISD=80A

VGS=0

800.246

ISD=80Adi/dt=100A/µs

TJ=150oCVDD=20V

(seetestcircuit,fig.5)

TestConditions

Min.

Typ.

Max.803201.5

UnitAAVnsµCA

(∗)Pulsed:Pulseduration=300µs,dutycycle1.5%(•)Pulsewidthlimitedbysafeoperatingarea

3/7

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STB80NF55-06

Fig.1:UnclampedInductiveLoadTestCircuit

Fig.2:UnclampedInductiveWaveform

Fig.3:SwitchingTimesTestCircuitsForResistiveLoad

Fig.4:GateChargetestCircuit

Fig.5:TestCircuitForInductiveLoadSwitchingAndDiodeRecoveryTimes

4/7

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STB80NF55-06

TO-262(I2PAK)MECHANICALDATA

mm

MIN.

AA1BB2CC2DeELL1L2

4.42.490.71.140.451.238.952.41013.13.481.27

TYP.

MAX.4.62.690.931.70.61.369.352.710.413.63.781.4

MIN.0.1730.0980.0270.0440.0170.0480.3520.0940.3930.5150.1370.050

inchTYP.

MAX.0.1810.1060.0360.0670.0230.0530.3680.1060.4090.5310.1490.055

DIM.

AC2B2BEL1

L2

D

L

P011P5/E

5/7

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STB80NF55-06

TO-263(D2PAK)MECHANICALDATA

mm

MIN.

AA1BB2CC2DEGLL2L3

4.42.490.71.140.451.218.95104.88151.271.4

TYP.

MAX.4.62.690.931.70.61.369.3510.45.2815.851.41.75

MIN.0.1730.0980.0270.0440.0170.0470.3520.3930.1920.5900.0500.055

inchTYP.

MAX.0.1810.1060.0360.0670.0230.0530.3680.4090.2080.6240.0550.068

DIM.

D

A

A2DETAIL”A”

A1

B2

BG

C

C2DETAIL”A”

E

L2

L

L3

P011P6/E

6/7

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STB80NF55-06

Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSTMicroelectronics.

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